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NXP Semiconductors
PRTR5V0U2X
Ultra low capacitance double rail-to-rail ESD protection diode
1.4 Quick reference data
Table 1. Quick reference data
T amb = 25 ° C unless otherwise speci?ed.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
V RWM
reverse standoff voltage
-
-
5.5
V
C (I/O-GND)
input/output to ground
f = 1 MHz;
-
1
1.5
pF
capacitance
V (I/O-GND) = 0 V
C sup
supply pin to ground
f = 1 MHz;
-
16
-
pF
capacitance
V CC = 0 V
[1]
[2]
Measured from pin 2 and 3 to ground.
Measured from pin 4 to ground.
2. Pinning information
Table 2.
Pinning
Pin
1
Symbol
GND
Description
ground
Simpli?ed outline
Graphic symbol
2
I/O 1
input/output 1
4
3
3
4
I/O 2
V CC
input/output 2
supply voltage
1
4
1
2
3. Ordering information
2
006aaa482
3
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PRTR5V0U2X
-
plastic surface-mounted package; 4 leads
SOT143B
4. Marking
Table 4.
Marking codes
Type number
PRTR5V0U2X
Marking code [1]
*R1
PRTR5V0U2X_2
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
? NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 14 January 2008
2 of 11
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